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| FDS6688 December 2001 FDS6688 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features * 16 A, 30 V. RDS(ON) = 6 m @ VGS = 10 V RDS(ON) = 7 m @ VGS = 4.5 V * Ultra-low gate charge (40 nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * DC/DC converter D D SO-8 D D DD D D 5 6 4 3 2 1 Pin 1 SO-8 G SG S S SS S TA=25oC unless otherwise noted 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 30 16 (Note 1a) Units V V A W 16 50 2.5 1.4 1.2 -55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 C/W C/W C/W Package Marking and Ordering Information Device Marking FDS6688 Device FDS6688 Reel Size 13'' Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDS6688 Rev C(W) FDS6688 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 30 Typ Max Units V Off Characteristics ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 16 V, VGS = -16 V, VGS = 0 V VDS = 0 V VDS = 0 V 1 1.8 -6 4.5 5.2 6.2 50 84 3888 931 401 14 11 69 32 VDS = 15 V, VGS = 5 V ID = 16 A, 40 11 15 2.1 (Note 2) 21 10 100 -100 3 mV/C A nA nA V mV/C 6 7 9 m On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 16 A, TJ=125C VGS = 10 V, VDS = 5 V, VDS = 5 V ID = 16 A ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD A S pF pF pF 25 20 110 51 56 ns ns ns ns nC nC nC A V Dynamic Characteristics VDS = 15 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage 0.7 1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper b) 105C/W when 2 mounted on a .04 in pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6688 Rev C(W) FDS6688 Typical Characteristics 50 VGS = 10V 5.0V 4.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 1.4 1.2 1 0.8 ID, DRAIN CURRENT (A) 40 VGS = 3.0V 30 20 3.5V 4.0V 4.5V 6.0V 10V 10 0 0 0.25 0.5 0.75 1 VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.014 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = 16A VGS = 10V ID = 8A 0.011 TA = 125oC 0.008 0.005 TA = 25oC 0.002 125 150 175 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 150 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V ID, DRAIN CURRENT (A) 120 10 1 0.1 0.01 VGS = 0V TA = 125oC 90 60 25oC TA =125oC 30 -55oC 0.001 25oC -55oC 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6688 Rev C(W) FDS6688 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) 6000 ID = 16A 8 VDS = 5V 15V 10V CAPACITANCE (pF) 5000 CISS 4000 3000 2000 1000 f = 1MHz VGS = 0 V 6 4 COSS CRSS 2 0 0 20 40 Qg, GATE CHARGE (nC) 60 80 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 0.01 0.01 0.1 1 10 100s 40 SINGLE PULSE RJA = 125C/W TA = 25C 30 1 20 0.1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) + RJA RJA = 125 C/W P(pk) 0.01 0.1 0.1 0.05 0.02 t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6688 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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